Sezawa surface acoustic wave device using a piezoelectric layer

Details Sezawa surface acoustic wave device using a piezoelectric layer Sezawa surface acoustic wave device using a piezoelectric layer

1984-11-30

1986-02-18

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310313B, H01L 4108

Patent

active

045715190

ABSTRACT:
A surface acoustic wave device comprising a surface acoustic wave substrate member composed by forming an aluminum nitride film and a thin zinc oxide film successively on a glass substrate. The thickness h.sub.1 of the aluminum nitride film and the thickness h.sub.2 of the zinc oxide film are set within ranges of 0.1.ltoreq.h.sub.1 /.lambda..ltoreq.10 and 0.05.ltoreq.h.sub.2 /.lambda..ltoreq.0.3 (where .lambda. is representative of wavelength of Sezawa wave) respectively, thereby to utilize Sezawa wave or a similar mode wave transmitted on the surface acoustic wave substrate member in multi-layer structure.

REFERENCES:
patent: 4223286 (1980-09-01), Ono et al.
patent: 4354130 (1982-10-01), Ono et al.
patent: 4511816 (1985-04-01), Mikoshiba
patent: 4516049 (1985-05-01), Mikoshiba et al.
Aluminum Nitride on Silicon Surface Acoustic Wave Devices, by L. G. Pearce et al., Applied Physics Letters, vol. 39, No. 11, Dec. 1981, pp. 878-879.

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