Setting threshold voltages of cells in a memory block to...

Details Setting threshold voltages of cells in a memory block to... Setting threshold voltages of cells in a memory block to...

2007-02-09

2009-08-11

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Powering

Conservation of power

C365S229000, C365S194000, C365S051000, C365S063000, C365S156000, C365S206000, C365S230060, C365S230050

Reexamination Certificate

active

07573775

ABSTRACT:
In one embodiment, a memory block includes one or more bit lines that each include two or more cells. Each cell in each bit line has a distance from a sense amplifier coupled to the bit line, and each of one or more of the cells in each of one or more of the bit lines has a delay particularly set according to the distance of the cell from the sense amplifier coupled to the bit line.

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