Series connected flip chip LEDs with growth substrate removed

Details Series connected flip chip LEDs with growth substrate removed Series connected flip chip LEDs with growth substrate removed

2008-11-06

2011-11-22

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S034000, C257SE21002, C257SE33057

Reexamination Certificate

active

08062916

ABSTRACT:
LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

REFERENCES:
patent: 6547249 (2003-04-01), Collins, III et al.
patent: 2003/0020084 (2003-01-01), Fan et al.
patent: 2008/0211416 (2008-09-01), Negley et al.
patent: 2008/0230789 (2008-09-01), Onushkin et al.
patent: 1596442 (2005-11-01), None
International Search Report, PCT/IB2009/054809.

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