Serial readout stratified channel CCD

Details Serial readout stratified channel CCD Serial readout stratified channel CCD

1978-01-16

1981-06-02

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 30, 307221D, H01L 2978, H01L 2714, H01L 3100, G11C 1928

Patent

active

042714192

ABSTRACT:
A serial readout stratified channel CCD includes a semiconductor substrate with a charge transfer channel lying therein. A barrier region lies under and adjacent to the charge transfer channel; and a plurality of spaced apart charge integration regions lie under and adjacent to the barrier region. The semiconductor substrate and barrier region have dopant atoms of a first type; while the charge transfer channel and plurality of charge integration regions have dopant atoms of a second type opposite to the first type. An insulating layer overlies the charge transfer channel; and a plurality of phase electrodes are serially disposed on the insulating layer transversely to the channel. In operation, charge transfers from the charge integration regions to respective portions of the charge transfer channel, and is propagated along the charge transfer channel.

REFERENCES:
patent: 3739240 (1973-06-01), Krambeck
patent: 3852799 (1974-12-01), Walden
patent: 3852801 (1974-12-01), Itoh et al.
patent: 3864722 (1975-02-01), Carnes
patent: 4032952 (1977-06-01), Ohba et al.

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