Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1979-11-08
1981-07-14
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
357 49, 357 55, 427 96, 427255, 4272553, 4272554, 427379, H01L 21316, H01L 21324
Patent
active
042787050
ABSTRACT:
A process for making dielectrically isolated silicon integrated circuits which use silicon oxide filled trenches to provide isolation is described. To minimize damage to the silicon, the trenches are filled by sequentially annealed oxidation process which involves alternately growing some oxide and then annealing to relieve stresses before growing more oxide.
REFERENCES:
patent: 3913211 (1975-10-01), Seeds et al.
patent: 3958040 (1976-05-01), Webb
patent: 3969162 (1976-07-01), Kuhn
patent: 4001465 (1977-01-01), Graul et al.
patent: 4042726 (1977-08-01), Kaji et al.
patent: 4079506 (1978-03-01), Suzuki et al.
patent: 4139658 (1979-02-01), Cohen et al.
patent: 4140548 (1979-02-01), Zimmer
patent: 4167915 (1979-09-01), Toole et al.
patent: 4199384 (1980-04-01), Hsu
Capell et al. "Process Refinements bring C-MOS on Sapphire into Commercial Use", Electronics, May 26, 1977, pp. 99-105.
Agraz-Guerena Jorge
Katz Lewis E.
Morris Bernard L.
Bell Telephone Laboratories Incorporated
Smith John D.
Torsiglieri Arthur J.
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