Sequential staggered type thin film transistor

Details Sequential staggered type thin film transistor Sequential staggered type thin film transistor

1997-08-18

1999-02-23

Dang, Hung Xuan

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349 47, 257 59, G02F 1136, H01L 2904

Patent

active

058750096

ABSTRACT:
There is herein disclosed a sequential staggered type thin film transistor in a liquid crystal display comprising a glass substrate, and a gate line, a drain line, a pixel electrode and the sequential staggered type thin film transistor formed on the glass substrate, wherein the sequential staggered type thin film transistor has a structure in which an amorphous silicon layer, a gate insulating film and a gate electrode are laminated in turn on a source electrode and a drain electrode, and the width of an outgoing line connecting the source electrode of the thin film transistor to the pixel electrode is smaller than that of the source electrode.

REFERENCES:
patent: 4907861 (1990-03-01), Muto
patent: 5229644 (1993-07-01), Wakai et al.
F. Richou et al., "33.2: The 2S TFT Process for Low-Cost AMLCD Manufacturing", SID 92 Digest, pp. 619-622.

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