Sequential-quenching resonant-tunneling transistor

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357 16, 357 4SL, 357 57, 357 58, 357 34HB, H01L 2972

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active

049996975

ABSTRACT:
A plurality of decoupled quantum wells in a transistor device enables such device to operate with multiple-peak characteristics. The device is suitable for a variety of circuit applications in switching systems and in central processor logic units and memories; specific applications include frequency multipliers, waveform scramblers, parity-bit generators, analog-to digital converters, and multiple-valued logic units.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4797722 (1989-01-01), Shannon
patent: 4825264 (1989-04-01), Inata et al.
patent: 4845541 (1989-07-01), Xu et al.
patent: 4849799 (1989-07-01), Capasso et al.
patent: 4868418 (1989-09-01), Imamura et al.
patent: 4907196 (1990-03-01), Mori et al.
patent: 4912539 (1990-03-01), Haddad et al.
Capasso et al., "Multiple Negative Transconductance and . . . of Resonant Tunneling", Appl. Phys. Lett. 53(12), 9/19/1988.
Levine et al., "InGaAs/InAlAs . . . at a Wavelength of .lambda.=4.4 .mu.m" Appl. Phys. Lett. 52 (18), 5/2/88.
Chen et al., "Enhanced Ballistic Transport in InGaAs/InAlAs Hot-Electron Transistors", Appl. Phys. Lett. 51 (16), 10/19/87.
"Combining Resonant Tunneling Diodes for Signal Processing and Multilevel Logic", A. A. Lakhani et al., Applied Physics Letters, vol. 52 (1988), pp. 1684-1685.
"Eleven-Bit Parity Generator with a Single, Vertically Integrated Resonant Tunneling Device", A. A. Lakhani et al., Electronics Letters, vol. 24 (1988), pp. 681-683.
"Three-Dimensional Integration of Resonant Tunneling Structures for Signal Processing and Three-State Logic", R. C. Potter et al., Applied Physics Letters, vol. 52 (1988), pp. 2163-2164.
"New Resonant-Tunneling Devices with Multiple Negative Resistance Regions and High Room-Temperature Peak-to-Valley Ratio", S. Sen et al., IEEE Electron Device Letters, vol. 9, (1988), pp. 402-404.
"A New Functional Resonant-Tunneling Hot Electron Transistor (RHET)", N. Yokohama et al., Japanese Journal of Applied Physics, vol. 24 (1985), pp. L853-L854.
"Quantum-Well Resonant Tunneling Bipolar Transistor Operating at Room Temperature", F. Capasso et al., IEEE Electron Device Letters, vol. EDL-7 (1986), pp. 573-576.
"Resonant Tunneling Gate Field-Effect Transistor", F. Capasso et al., Electronics Letters, vol. 23 (1987), pp. 225-226.

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