Sequential pulse deposition

Details Sequential pulse deposition Sequential pulse deposition

2011-03-22

2011-03-22

Sefer, A. (Department: 2893)

Coating processes

Direct application of electrical, magnetic, wave, or...

Chemical vapor deposition

C427S588000, C427S096800, C438S758000

Reexamination Certificate

active

07910177

ABSTRACT:
A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4747367 (1988-05-01), Posa
patent: 4888199 (1989-12-01), Felts et al.
patent: 5102694 (1992-04-01), Taylor et al.
patent: 5138520 (1992-08-01), McMillan et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5164040 (1992-11-01), Eres et al.
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5227331 (1993-07-01), Westmoreland
patent: 5240739 (1993-08-01), Doan et al.
patent: 5254499 (1993-10-01), Sandhu et al.
patent: 5255258 (1993-10-01), Kawade et al.
patent: 5261963 (1993-11-01), Basta et al.
patent: 5278100 (1994-01-01), Doan et al.
patent: 5330610 (1994-07-01), Eres et al.
patent: 5368685 (1994-11-01), Kumihashi et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5382550 (1995-01-01), Iyer
patent: 5439876 (1995-08-01), Graf et al.
patent: 5445699 (1995-08-01), Kamikawa et al.
patent: 5451260 (1995-09-01), Versteeg et al.
patent: 5453494 (1995-09-01), Kirlin et al.
patent: 5480684 (1996-01-01), Sandhu
patent: 5571572 (1996-11-01), Sandhu
patent: 5576071 (1996-11-01), Sandhu
patent: 5616208 (1997-04-01), Lee
patent: 5648321 (1997-07-01), Bednorz et al.
patent: 5661115 (1997-08-01), Sandhu
patent: 5693377 (1997-12-01), Westmoreland et al.
patent: 5733816 (1998-03-01), Iyer et al.
patent: 5741546 (1998-04-01), Sandu
patent: 5741547 (1998-04-01), Akram et al.
patent: 5755885 (1998-05-01), Mikoshiba et al.
patent: 5804259 (1998-09-01), Robles
patent: 5874131 (1999-02-01), Vaartstra et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5902651 (1999-05-01), Westmoreland et al.
patent: 5924012 (1999-07-01), Vaarstra
patent: 5972430 (1999-10-01), DiMeo et al.
patent: 6001728 (1999-12-01), Bhan et al.
patent: 6010969 (2000-01-01), Vaartstra
patent: 6063705 (2000-05-01), Vaartstra
patent: 6071572 (2000-06-01), Mosely et al.
patent: 6110529 (2000-08-01), Gardiner et al.
patent: 6127192 (2000-10-01), Uhlenbrock et al.
patent: 6133161 (2000-10-01), Uhlenbrock et al.
patent: 6136690 (2000-10-01), Li
patent: 6136703 (2000-10-01), Vaartstra
patent: 6139780 (2000-10-01), Desu et al.
patent: 6140230 (2000-10-01), Li
patent: 6143362 (2000-11-01), Sandhu et al.
patent: 6156674 (2000-12-01), Li et al.
patent: 6198144 (2001-03-01), Pan et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6204172 (2001-03-01), Marsh
patent: 6214729 (2001-04-01), Uhlenbrock et al.
patent: 6217645 (2001-04-01), Vaartstra
patent: 6218288 (2001-04-01), Li et al.
patent: 6225237 (2001-05-01), Vaartstra
patent: 6239028 (2001-05-01), Vaartstra
patent: 6273954 (2001-08-01), Nishikawa et al.
patent: 6287980 (2001-09-01), Hanazaki et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6539891 (2003-04-01), Lee et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2002/0052120 (2002-05-01), Shintani et al.
Buchholz, D., et al., “In-plane orientation control of (001)YBa2Cu307- grown on (001)MgO by pulsed organometallic beam epitaxy”,App. Phys. Lett., 68(21), (1996),3037-3039.
Duray, S., et al., “Pulsed organometallic beam epitaxy of complex oxide films”,Appl. Phys. Lett., 59(12), (1991),pp. 1503-1505.
Fujii , K., et al., “Preparation of YBa2Cu3Ox Thin Films by Layer-by-Layer Metalorganic Chemical Vapor Deposition”,Jpn. J. Appl. Phys., 31, (1992),pp. L 787-L789.
Hirai, T., et al., “Preparation of Perovskite Oriented PbZrxTi1-xO3Films with Suppressed Vapor Phase Reactions by a Digital Chemical Vapor Methos”,Jpn. J. Appl. Phys, 34, (1995),pp. 539-543.
Ikegawa, S., et al., “Growth of CeO2thin films by metal-organic molecular beam epitaxy”,Thin Solid Films, (1996),pp. 60-63.
Lang, F., et al., “Investigation of the film growth of a new titanium precursor for MOCVD”,Journal of Non-Crystalline Solids, 187, (1995),pp. 430-434.
Sotome, Y., et al., “c-Axis-Oriented Pb(Zr, Ti)O3Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method”,Jpn. J. Appl. Phys., 33, (1994),pp. 4066-4069.
Versteeg, V., et al., “Metalorganic Chemical Vapor Deposition by Pulsed Liquid Injection Using an Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium(IV) Isopropoxide”,J. Am. Ceram. Soc., 78(10), (1995),pp. 2763-2768.
Xie, H., et al., “Epitaxial LiTaO3thin film by pulsed metalorganic chemical vapor deposition from a single precursor”,App. Phys. Lett., 63(23), (1993),pp. 3146-3148.

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