Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-08-30
2005-08-30
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S199000, C257S438000, C257S481000, C257S482000, C257S551000, C257S586000, C257S589000, C257S600000, C257S603000, C257S604000, C257S605000, C257S606000, C257S615000, C257S618000, C257S623000, C257S625000, C257S626000
Reexamination Certificate
active
06936868
ABSTRACT:
A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.
REFERENCES:
patent: 5075750 (1991-12-01), Kagawa
patent: 5187553 (1993-02-01), Makita
patent: 5308995 (1994-05-01), Tsuji et al.
patent: 5338947 (1994-08-01), Watanabe
patent: 5457327 (1995-10-01), Taguchi
patent: 5539221 (1996-07-01), Tsuji et al.
patent: 5552629 (1996-09-01), Watanabe
patent: 5569942 (1996-10-01), Kusakabe
patent: 5654578 (1997-08-01), Watanabe
patent: 5937274 (1999-08-01), Kondow et al.
patent: 6104047 (2000-08-01), Watanabe
patent: 6350998 (2002-02-01), Tsuji
patent: 6437362 (2002-08-01), Suzuki
patent: 6635908 (2003-10-01), Tanaka et al.
patent: 2004/0183097 (2004-09-01), Hiraoka et al.
patent: 2004/0188807 (2004-09-01), Hiraoka et al.
Hiraoka Jun
Mizuno Kazuo
Sasaki Yuichi
Anritsu Corporation
Frishauf Holtz Goodman & Chick P.C.
Soward Ida M.
Zarabian Amir
LandOfFree
Sequential mesa avalanche photodiode capable of realizing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sequential mesa avalanche photodiode capable of realizing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sequential mesa avalanche photodiode capable of realizing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3517108