Sequential lateral solidification device and method of...

Electric heating – Metal heating – By arc

Reexamination Certificate

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C438S486000

Reexamination Certificate

active

07569793

ABSTRACT:
A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed in parallel to an imaginary line connecting the alignment keys with information for a distance between the mask and the alignment key. The SLS device includes a laser beam generator for irradiating laser beams; a mask having a plurality of areas; a mask stage for moving the mask loaded thereto, to transmit a laser beam through a selective area of the mask; and a substrate stage for moving a substrate loaded thereto, to change portions of the substrate irradiated with the laser beam passing through the mask.

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Sposili, Robert S., Crowder, M.A. and Im, James S., “Single-Crystal Si Films Via a Low-Substrate-Temperature Excimer-Laser Crystallization Method,” Mat. Res. Soc. Symp. Proc., vol. 452, pp. 956-957, 1997.

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