Sequential access memory method

Details Sequential access memory method Sequential access memory method

2009-01-13

2010-11-09

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Addressing

Sequential

C365S203000, C365S230020, C365S189020, C365S189170

Reexamination Certificate

active

07830743

ABSTRACT:
A sequential access memory (“SAM”) device, system and method is provided that includes a memory array configured to store a group of bytes on each of a plurality of rows. A plurality of bit-lines transfer each of the group of bytes into and out of the memory array, and a pre-charging unit is configured to pre-charge the plurality of bit-lines once per each transfer of one of the group of bytes into or out of one of the plurality of rows. The device operates by accessing a memory array in a SAM device by activating a selected row in the memory array, pre-charging a plurality of bit-lines that provide access to the memory array, and accessing the memory array before the plurality of bit-lines are pre-charged a second time.

REFERENCES:
patent: 5027326 (1991-06-01), Jones
patent: 5253203 (1993-10-01), Partovi et al.
patent: 5280449 (1994-01-01), Oldham
patent: 5381363 (1995-01-01), Bazes
patent: 5479370 (1995-12-01), Furuyama et al.
patent: 5535170 (1996-07-01), Imamura et al.
patent: 5612926 (1997-03-01), Yazawa et al.
patent: 5636174 (1997-06-01), Rao
patent: 5699087 (1997-12-01), Krenik et al.
patent: 5831924 (1998-11-01), Nitta et al.
patent: 5848015 (1998-12-01), Seno
patent: 5995430 (1999-11-01), Yabe
patent: 6098145 (2000-08-01), Huang
patent: 6249482 (2001-06-01), Albon et al.
patent: 6327192 (2001-12-01), Lee
patent: 6792502 (2004-09-01), Pandya et al.
patent: 7460432 (2008-12-01), Warner
patent: 7477570 (2009-01-01), Warner
patent: 2002/0163848 (2002-11-01), Grasso
patent: 2004/0252201 (2004-12-01), Meitav et al.
patent: 2005/0041806 (2005-02-01), Pinto et al.

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