Sequence of etching polysilicon in semiconductor memory devices

Details Sequence of etching polysilicon in semiconductor memory devices Sequence of etching polysilicon in semiconductor memory devices

1988-05-02

1989-10-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437 48, 437 52, 437 60, 437228, 437233, 437919, H01L 2122

Patent

active

048716880

ABSTRACT:
A semiconductor memory device such as a dymanic random access memory (DRAM) is formed by first forming a burried contact in a silicon wafer and patterning a series of transistors. After the transistors are patterned, oxide layers are applied and the transistors are etched. Cell bottom plates are then formed and electrical connections between the transistors and a periphery are established. The establishment of the transistors are to forming the cell bottom plates and its more efficient manufacture of the DRAM devices and increases manufacturing yield.

REFERENCES:
patent: 3387286 (1968-06-01), Demmard
patent: 4013489 (1977-03-01), Oldham
patent: 4240195 (1980-12-01), Clemens
patent: 4350536 (1982-09-01), Nakano et al
patent: 4352236 (1982-10-01), McCollum
patent: 4361949 (1982-12-01), Hori et al.
patent: 4364075 (1982-12-01), Bohr et al.
patent: 4391032 (1983-05-01), Schulte
patent: 4413402 (1983-11-01), Erb
patent: 4445266 (1984-05-01), Mai et al.
patent: 4466177 (1984-08-01), Chao
patent: 4482908 (1984-11-01), Henderson, Sr.
patent: 4536947 (1985-08-01), Bohr
patent: 4542481 (1985-09-01), Lange
patent: 4558343 (1985-12-01), Ariizumi et al.
patent: 4700328 (1987-10-01), Burghard
patent: 4735915 (1988-04-01), Kita et al.
Geipel, IBM TDB, vol. 20, No. 7, Dec. 1977, pp. 2592-2593.

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