Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1994-05-17
1996-08-13
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257500, 257544, 257552, 327565, H01L 2900
Patent
active
055459170
ABSTRACT:
A semiconductor integrated circuit has a P-type substrate and a plurality of PN-junction isolated islands of N-type, a first one of the islands may contain a power device which during certain periods of operation causes the first island to become forward biassed and to inject electrons into the substrate. Collection of these injected charges by a second island at one side of the injecting island is reduced by a separate protective bipolar transistor formed in a third N-type island. The third island is preferably interposed between the injecting island and the islands to be protected, but may be located anywhere with respect to the injecting transistor. The emitter of the protective transistor is electrically connected to an N-type portion of the first island. The collector of the protective transistor is connected to the P-type isolation-wall portion of the substrate located between the injecting transistor and the small islands to be protected. The base of the protective transistor, and the isolation-wall portion of the substrate at the opposite side of the first island, are electrically connected to a circuit ground point in the integrated circuit. This causes preferential injection through that part of the forward biassed PN-junction of the injecting island, which part is farthest from the second island. It also generates a field under the first island, proportional to the magnitude of the injected current, that further diverts and prevents diffusion of the injected charges toward the second island.
REFERENCES:
patent: 4027325 (1977-05-01), Genesi
patent: 4458158 (1984-07-01), Mayrand
patent: 4466011 (1984-08-01), Zanten
patent: 4646124 (1987-02-01), Zunino
patent: 5021860 (1991-06-01), Bertotti et al.
Cooper Richard B.
Peppiette Roger C.
Stoddard Robert J.
Allegro Microsystems Inc.
Guay John
Jackson, Jr. Jerome
LandOfFree
Separate protective transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Separate protective transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Separate protective transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1050101