Separate confinement heterostructure with asymmetric...

Details Separate confinement heterostructure with asymmetric... Separate confinement heterostructure with asymmetric...

2011-03-08

2011-03-08

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07903711

ABSTRACT:
A separate confinement heterostructure includes a quantum-well layer bounded by an n-side waveguide layer and a p-side waveguide layer. The waveguide layers guide a lasing mode of the heterostructure. The n-side waveguide layer is composed of indium gallium phosphide (InGaP) and the p-side layer is composed of aluminum gallium arsenide (AlGaAs). The heterostructure is configured such that more than 80% of the optical mode propagates in the n-side waveguide layer.

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