Separate confinement heterostructure semiconductor laser device

Details Separate confinement heterostructure semiconductor laser device Separate confinement heterostructure semiconductor laser device

1986-07-11

1988-05-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 44, 357 16, 357 17, 357 90, H01S 319

Patent

active

047456124

ABSTRACT:
The laser device has an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.3) quantum well active region having a thickness of 200 angstroms or less. Al.sub.y Ga.sub.1-y As (y>x) carrier supplying layers sandwich the quantum well active region therebetween. An Al.sub.z Ga.sub.1-z As (z>y) cladding layer is disposed on each of the carrier supplying layers. Finally an Al.sub.w Ga.sub.1-w As (w>z) barrier layer is disposed between each of the carrier supplying layers and each of the cladding layers.

REFERENCES:
patent: 4512022 (1985-04-01), Tsang
patent: 4644378 (1987-02-01), Williams
patent: 4671830 (1987-06-01), Burnham
T. Hayakawa et al., Journal of Applied Physics, vol. 54, May 1983, pp. 2209-2213.
S. Yamamoto et al., Appl. Phys. Lett., vol. 41:796-798.
T. Fujii et al., Extended Abstracts of the 16th Conference on Solid State Devices and Materials.

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