Separate confinement electroabsorption modulator utilizing the F

Details Separate confinement electroabsorption modulator utilizing the F Separate confinement electroabsorption modulator utilizing the F

1991-08-02

1992-11-17

Lee, John D.

Optical waveguides

Directional optical modulation within an optical waveguide

Electro-optic

385 2, 385131, G02B 610, G02F 117

Patent

active

051651050

ABSTRACT:
A semiconductor heterojunction, guided-wave, electroabsorption modulator. The device includes a rib waveguide fabricated on a substrate. The waveguide includes a relatively thin and off-center undoped electroabsorbing layer within a light-guiding region. Electrodes configured for interconnection to an external voltage source produce an electric field within the waveguide. Heavily doped field confining layers on opposite sides of the electroabsorbing layer confine the electric field within the electroabsorbing layer to cause the electroabsorption of radiation in accordance with the Franz-Keldysh effect.

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"Limits of Electro-absorption in High Purity GaAs, and the Optimisation of Waveguide Devices", Wight et al, IEE Proceedings Article; vol. 135, pp. 39-44, Feb. 1988.
"Separate-Confinement Broad-Area Lasers," Casey and Panish Book entitled Heterostructure Lasers, pp. 197-199.

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