Sensor using a field effect transistor and method of fabricating

Details Sensor using a field effect transistor and method of fabricating Sensor using a field effect transistor and method of fabricating

1986-08-26

1989-11-14

James, Andrew J.

Chemistry: molecular biology and microbiology

Micro-organism, tissue cell culture or enzyme using process...

Preparing compound containing saccharide radical

357 231, 435176, H01L 2966, H01L 2996

Patent

active

048811092

ABSTRACT:
Disclosed is a sensor using a field effect transistor. The sensor includes a field effect transistor having a gate electrode, a reactive monomolecular film formed on the surface of the gate electrode, and a sensing material fixed on the gate electrode through a reactive monomolecular film by a chemical bond. The sensing material is strongly bonded to the reactive monomolecular film in such manner that the sensing material is kept alive. Thereby, sensitivity of the sensor is improved.

REFERENCES:
patent: 4020830 (1977-05-01), Johnson et al.
patent: 4218298 (1980-08-01), Shimada et al.
patent: 4562157 (1985-12-01), Lowe et al.
patent: 4670390 (1983-08-01), Antal nee Magyar
patent: 4683203 (1987-07-01), Anton et al.

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