Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1982-09-30
1985-05-14
Davie, James W.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
250578, 357 30, 357 45, 357 61, G01T 124, H01L 2714
Patent
active
045174644
ABSTRACT:
An infrared sensor system for use on satellites comprising dual arrays of mercury cadmium telluride semiconductor elements. One array of conventional photovoltaic detectors is wired in parallel with a novel array of HdCdTe material in which the n-type region of each mesa and the resulting p-n junction is considerably smaller than that utilized in the conventional detector. As the cumulative dose of incident radiation is increased, type conversion in both arrays occurs resulting in degraded performance in the conventional array but an increase in performance caused by the now effective p-n junction area in the novel array. An electronic switching device, coupled with a dosimeter, alternately selects the conventional array or the novel array depending upon the total dose of radiation received.
REFERENCES:
patent: 4063095 (1977-12-01), Wieder
patent: 4217490 (1980-08-01), Fiorito et al.
"Mechanisms of Radiation Effects in Electronic Material", vol. 1, by V. A. J. van Lint et al., 1980, pp. 1-13, and 335, 347-355.
"High-Performance Backside-Illuminated Hg.sub.0.78 Cd.sub.0.22 Te/Cd Te (.lambda..sub.co =10 .mu.m) Planar Diodes", M. Chu et al., Sep. 1980, pp. 486-488.
Heath James E.
Swenson Hilmer W.
Davie James W.
Epps Georgia
Franz Bernard E.
Singer Donald J.
The United States of America as represented by the Secretary of
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