Sensor, solid-state imaging device, and imaging apparatus...

Details Sensor, solid-state imaging device, and imaging apparatus... Sensor, solid-state imaging device, and imaging apparatus...

2009-01-15

2011-10-11

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S072000, C257SE31113, C438S097000

Reexamination Certificate

active

08035182

ABSTRACT:
A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.

REFERENCES:
patent: 5965875 (1999-10-01), Merrill
patent: 7141824 (2006-11-01), Forbes et al.
patent: 2005-010114 (2005-01-01), None

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