Sensor of the instant power dissipated in a power transistor

Details Sensor of the instant power dissipated in a power transistor Sensor of the instant power dissipated in a power transistor

1996-10-30

1999-06-29

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including protection means

330207P, H03F 152

Patent

active

059173823

ABSTRACT:
A sensor of instantaneous power which is dissipated through a power transistor of the MOS type connected between the output terminal of a power stage and ground. It comprises a MOS transistor having its gate terminal connected to that of the power transistor, source terminal connected to ground, and drain terminal connected to a circuit node which is coupled to the output terminal by means of a current mirror circuit which includes a resistive element in its input leg. Connected to the circuit node is the base terminal of a bipolar transistor which is respectively connected, through a diode and a constant current generator between the output terminal and ground.

REFERENCES:
patent: 4355341 (1982-10-01), Kaplan
patent: 4564879 (1986-01-01), Bienstman

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