Sensor for controlling water quality of reactor and method of co

Measuring and testing – Specimen stress or strain – or testing by stress or strain... – By loading of specimen

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73776, G01N 1908

Patent

active

052012298

ABSTRACT:
An element (e.g., a sensor) has a fine-line thin film of a conductor formed on a non-conductive substrate, and a change of physical properties (e.g., deformation) of the substrate or the ambient environment is detected through a change in physical properties of the conductor. The element is manufactured by forming a layered film, composed of a semiconductor and a conductor, on the substrate, and forcibly diffusing part of this film, e.g., by selective irradiation with high-energy ions, to form this part into an alloy semi-conductor, thereby providing a two-dimensional pattern of the fine lines of the conductor and the semiconductor. By arranging a plurality of fine lines of a conductor transversely to a direction of growth of a crack in the substrate, crack in the substrate is detected through a change in electrical resistance of the fine lines. A dissolved oxygen sensor, a hydrogen sensor, and an electrical conductivity sensor (of an ambient medium) can also be provided. To control water chemistry of a reactor, an amount of a water chemistry improving agent injected is controlled in accordance with an output of a water chemistry measurement sensor provided in water in a pressure vessel of the reactor. One or more of a dissolved oxygen sensor, a hydrogen sensor and an electrical conductivity sensor are formed directly on a surface of a structural material of the reactor.

REFERENCES:
patent: 3596269 (1971-07-01), Laska
patent: 4255974 (1981-03-01), Dufrane et al.

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