Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1997-09-10
1999-12-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257517, 257518, 257520, 7351416, 7351421, 7351422, 7351433, 7351434, 73DIG1, 73DIG4, 438 50, 438 52, H01L 2720, H01L 2984
Patent
active
059988169
ABSTRACT:
A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.
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F. Chang, et al., "Gas-phase Silicon Micromachining with Xenon Difluoride", SPIE, vol. 2641, 1995, pp. 117-128.
Hata Hisatoshi
Ishikawa Tomohiro
Kimata Masafumi
Nakaki Yoshiyuki
Ueno Masashi
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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