Sensor element having elevated diode with sidewall...

Details Sensor element having elevated diode with sidewall... Sensor element having elevated diode with sidewall...

2006-06-27

2006-06-27

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257S444000, C438S048000

Reexamination Certificate

active

07067891

ABSTRACT:
Each of an elevated diode sensor optoelectronic product and a method for fabricating the elevated diode sensor optoelectronic product employs a sidewall passivation dielectric layer passivating a sidewall of a patterned conductor layer which serves as a bottom electrode for an elevated diode within the elevated diode sensor optoelectronic product. The sidewall passivation dielectric layer eliminates contact between the patterned conductor layer and an intrinsic diode material layer within the elevated diode, thus providing enhanced performance of the elevated diode sensor optoelectronic product.

REFERENCES:
patent: 6018187 (2000-01-01), Theil et al.
patent: 6229192 (2001-05-01), Gu
patent: 6288435 (2001-09-01), Mei et al.
patent: 6730914 (2004-05-01), Chao et al.

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