Metal working – Barrier layer or semiconductor device making
Patent
1988-10-31
1990-12-18
Williams, Hezron E.
Metal working
Barrier layer or semiconductor device making
73 23200, 427226, G01R 300, H01S 4300
Patent
active
049776584
ABSTRACT:
Disclosed is a sensor comprising an insulating substrate, a plurality of electrodes coated on the insulating substrate and formed of a thin film conductor of a metallo-organic compound obtained by a pyrolysis, and a layer formed across the electrodes. The layer formed across the electodes has an electrical property changeable in accordance with an atmosphere. The sensor reduces the affection due to the existence of the step portion, restrains the structural deficiency at the step portion and improves the stability of the change with age. By the metallo-organic compound, the thin film layer can be formed by a pyrolysis at relatively low temperatures, and the electrodes can be formed in various structures and by various producing processes.
REFERENCES:
patent: 3522075 (1970-07-01), Kiel
patent: 4332879 (1982-01-01), Pastor et al.
patent: 4569826 (1986-02-01), Shiratori et al.
patent: 4656455 (1987-04-01), Tanino et al.
patent: 4740387 (1988-04-01), Manaka
patent: 4752501 (1988-06-01), Hicks et al.
Solid State Technology, entitled "Electrical Applications of Thin-Films Produced by Metallo-Organic Deposition," by C. Y. Kuo, dated Feb. 1974, pp. 49-55.
Denshi Zairyo, by Y. Nakamura, dated May 1982, pp. 51-54.
Awano Hiroshi
Iwai Takayoshi
Kawabata Yuka
Kabushiki Kaisha Toshiba
Williams Hezron E.
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