Sensor and method for making the same

Details Sensor and method for making the same Sensor and method for making the same

2011-01-25

2011-01-25

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C977S762000

Reexamination Certificate

active

07875480

ABSTRACT:
A method of making a sensor comprises substantially laterally growing at least one nanowire having at least two segments between two electrodes, whereby a junction or connection is formed between the at least two segments; and establishing a sensing material adjacent to the junction or connection, and adjacent to at least a portion of each of the at least two segments, wherein the sensing material has at least two states.

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patent: 2006/0097389 (2006-05-01), Islam et al.
Islam, M. S. et al., “A novel interconnection technique for manufacturing nanowire devices”, Applied Physics, vol. 80, 2005, pp. 1133-1140.
Islam, M. S. et al., “Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces”, Nanotechnology, vol. 15, 2004, pp. L5-L8.

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