Sensor

Measuring and testing – Fluid pressure gauge – Diaphragm

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Details

73724, 3612831, G01L 708, G01L 912

Patent

active

052592472

ABSTRACT:
A sensor for measuring pressure and acceleration is proposed; it has a monocrystalline silicon substrate (10) with a succession of thin films applied to its first primary surface. A deflectable membrane (12) in a frame (11) is structured out of the silicon substrate (10), and the membrane (12) is formed in the first primary surface. The membrane (12) has a reinforcement zone. In the succession of thin films that is applied to the first primary surface, there is a structure (50) having at least one first substructure, which is disposed parallel to the first primary surface of the silicon substrate (10). There is a gap between the first substructure and the silicon substrate (10). The first substructure is joined to the membrane (12) in the region of the reinforcement zone. It protrudes past the membrane (12) and extends at least partway over the frame (11). This first substructure forms one electrode of a capacitor. At least one first counterelectrode (161, 162) of the capacitor is disposed opposite the first substructure, in the region of the frame (11).

REFERENCES:
patent: 3859575 (1975-01-01), Lee et al.
patent: 4507973 (1985-04-01), Barr et al.
patent: 4562742 (1986-01-01), Bell
patent: 4719538 (1988-01-01), Cox
patent: 4741214 (1988-05-01), Vidmantas
patent: 4951510 (1990-08-01), Holm-Kennedy et al.
H. Guckel et al. of Univ. of Wisconsin Center for Applied Microelectronics, "Fine Grained Polysilicon and its Application to Planar Pressure Transducers", in Transducers '87 pp. 277-282.

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