Sensitized epitaxial infrared detector

Details Sensitized epitaxial infrared detector Sensitized epitaxial infrared detector

1982-03-17

1984-04-10

Edlow, Martin H.

357 63, 357 67, 357 61, H01L 2714, H01L 3300, H01L 29167, H01L 2348

Patent

active

044424469

ABSTRACT:
An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically insulating material, an Ohmic contact deposited on the epitaxial layer, and a non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material.

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