Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1989-07-19
1990-02-13
Chaudhuri, Olik
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
148 336, 437 5, 357 30, H01L 2144, H01L 2714, H01L 3102, H01L 3118
Patent
active
049003739
ABSTRACT:
In a process for preparing an infrared sentitive photodiode comprising the teps of:
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Chu Tak-Kin
Santiago Francisco
Chaudhuri Olik
Johnson Roger D.
The United States of America as represented by the Secretary of
Walden Kenneth E.
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