Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2005-05-17
2005-05-17
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S253000, C257S053000, C977S726000
Reexamination Certificate
active
06894359
ABSTRACT:
Nanostructure sensing devices for detecting an analyte are described. The devices include nanostructures connected to conductive elements, all on a substrate. Contact regions adjacent to points of contact between the nanostructures and the conductive elements are given special treatment. The proportion of nanostructure surface area within contact regions can be maximized to effect sensing at very low analyte concentrations. The contact regions can be passivated in an effort to prevent interaction between the environment and the contact regions for sensing at higher analyte concentrations and for reducing cross-sensing. Both contact regions and at least some portion of the nanostructures can be covered with a material that is at least partially permeable to the analyte of interest and impermeable to some other species to tune selectivity and sensitivity of the nanostructure sensing device.
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Bradley Keith
Collins Philip G.
Gabriel Jean-Christophe P.
Gruner George
Star Alexander
Dennis Robert F.
Nanomix Inc.
Nanomix, Inc.
Thompson Craig A.
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