Patent
1988-10-07
1990-08-14
Hille, Rolf
357 55, H01L 2974
Patent
active
049491474
ABSTRACT:
So as to avoid untimely triggering of a sensitive thyristor, it is given the structure shown in the accompanying figure, with a passivated furrow SP3 which divides the gate layer P1 into two completely separate zones (zone B and zone C). Zone B comprises on the one hand the whole of the cathode region N1 and on the other a first surface portion P'1 of the P layer adjacent the furrow SP3. Zone C comprises on the one hand an auxiliary N type surface region N3 and on the other a second surface portion P"1 of the layer P1. The cathode metallization CME1 covers the cathode region N1 without covering the region P'1. The gate metallization MG covers at least partially the region P'1. An auxiliary metallization MA separate from the others covers the region P'1 and the region N3.
REFERENCES:
patent: 3771029 (1973-11-01), Burtscher et al.
patent: 3970843 (1976-07-01), Dumas
patent: 4314266 (1982-02-01), Temple
patent: 4599633 (1986-07-01), Thire et al.
patent: 4614962 (1986-09-01), Bertotti et al.
patent: 4622572 (1986-11-01), Temple
patent: 4791470 (1988-12-01), Shinotte et al.
Patents Abstracts of Japan, vol. 5, No. 197 (E-86) [869], Dec. 15, 1981.
JP-A-56 116 666 (Nippon Denki K.K.), 12/09/1981.
"Thomson-CSF"
Hille Rolf
Loke Steven
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