Sensitive thyristor having improved noise-capability

Details Sensitive thyristor having improved noise-capability Sensitive thyristor having improved noise-capability

1988-10-14

1991-01-01

Hille, Rolf

357 39, 357 43, 357 234, H01L 29747, H01L 2702, H01L 2910

Patent

active

049822594

ABSTRACT:
A MOSFET is provided between a main thyristor and an auxiliary thyristor for controlling the main thyristor. The source and drain regions of the MOSFET are also used as a first N-type emitter region of the main thyristor and a second N-type emitter region of the auxiliary thyristor. The MOSFET and the auxiliary thyristor are controlled by an output of a gate energization circuit. When the MOSFET is turned on by an output of the gate energization circuit, the main thyristor is connected to the auxiliary thyristor. At this time, the auxiliary thyristor is turned on by the output of the gate energization circuit, and the main thyristor is also turned on due to the turn-on operation of the auxiliary thyristor. When the MOSFET is in the OFF state, the main thyristor is electrically isolated from the auxiliary thyristor.

REFERENCES:
patent: 4500902 (1985-02-01), Herberg
patent: 4502072 (1985-02-01), Herberg
patent: 4717947 (1988-01-01), Matsuda et al.

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