Sensitive technique for metal-void detection

Details Sensitive technique for metal-void detection Sensitive technique for metal-void detection

1998-10-27

2000-08-08

Niebling, John F.

Semiconductor device manufacturing: process

With measuring or testing

436 7, 148DIG162, 374 5, 374 57, G01R 3126

Patent

active

061001015

ABSTRACT:
A categorization of a particular semiconductor wafer based on void size is obtained from sigma data and T0.1% failure data that has been obtained from wafers subjected to isothermal testing. The sigma data and the T0.1% failure data for the particular wafer is compared to stored data corresponding to ranges for sigma and T0.1% data for each of a plurality of void categories, and the particular wafer is categorized based on the stored data. The T0.1% failure data is computed based on a T50% failure data and the sigma value, so that small sample sizes can be utilized to obtain the stored data.

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patent: 5497076 (1996-03-01), Kuo et al.
patent: 5505017 (1996-04-01), Yue et al.
patent: 5930587 (1999-07-01), Ryan

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