Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1977-03-21
1979-07-31
Edlow, Martin H.
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
357 30, 357 58, 357 52, 250370, 250390, H01L 2714
Patent
active
041632400
ABSTRACT:
A method is disclosed of controlling and improving the sensitivity of silicon PIN diodes to dosage by fast neutrons. The method includes selecting a silicon mass of high resistivity n or p-type material having a relatively long minority carrier lifetime, in excess of 250 microseconds ( .mu. sec) providing n.sup.+ and p.sup.+ -type junctions, and arranging the mass to obtain a silicon PIN diode dosimeter having a preselected ratio of edge area to volume. A silicon PIN diode personnel dosimeter sensitive to a radiation level of absorbed dose as low as 0.1 rad has been produced; this dosimeter, in the range from about 0.1 rad to about 10 rads has a sensitivity of at least 10 mV/rad.
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Swartz, et al., Journal of Applied Physics, vol. 37, No. 2, Feb. 1966.
Ammerlaan, Journal of Applied Physics, vol. 39, No. 13, Dec. 1968.
Swartz John M.
Swinehart Philip R.
Edlow Martin H.
Lobo Alfred D.
Lucas James A.
The Harshaw Chemical Company
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