Sensitive silicon pin diode fast neutron dosimeter

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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357 30, 357 58, 357 52, 250370, 250390, H01L 2714

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active

041632400

ABSTRACT:
A method is disclosed of controlling and improving the sensitivity of silicon PIN diodes to dosage by fast neutrons. The method includes selecting a silicon mass of high resistivity n or p-type material having a relatively long minority carrier lifetime, in excess of 250 microseconds ( .mu. sec) providing n.sup.+ and p.sup.+ -type junctions, and arranging the mass to obtain a silicon PIN diode dosimeter having a preselected ratio of edge area to volume. A silicon PIN diode personnel dosimeter sensitive to a radiation level of absorbed dose as low as 0.1 rad has been produced; this dosimeter, in the range from about 0.1 rad to about 10 rads has a sensitivity of at least 10 mV/rad.

REFERENCES:
patent: 3225198 (1965-12-01), Mayer
patent: 3396318 (1968-08-01), Chow
patent: 3527944 (1970-09-01), Kraner
patent: 3546459 (1970-12-01), Higatsberger
patent: 3588505 (1971-06-01), Johnson
patent: 3781612 (1973-12-01), Llacer
patent: 3928866 (1975-12-01), Digoy
patent: 3982267 (1976-09-01), Henry
Swartz, et al., Journal of Applied Physics, vol. 37, No. 2, Feb. 1966.
Ammerlaan, Journal of Applied Physics, vol. 39, No. 13, Dec. 1968.

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