Sensitive method of evaluating process induced damage in MOSFETs

Details Sensitive method of evaluating process induced damage in MOSFETs Sensitive method of evaluating process induced damage in MOSFETs

1997-01-16

1999-10-12

Brown, Glenn W.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324765, 324769, G01R 3126

Patent

active

059660244

ABSTRACT:
Techniques for measuring process induced damage, such as damage experienced during plasma etching or ion implementation, utilize a differential amplifier having multi-layer antennas (capacitors) of different sizes formed on respective inputs. Measurement of .DELTA.Ids (the difference between Ids.sub.1 and Ids.sub.2 off a MOSFET of the differential pair) or .DELTA.Idlin provides a sensitive and accurate measure of process induced damage. The techniques can be applied to monitor process induced damage while the manufacturing process is ongoing or as a measure of quality of the finished product.

REFERENCES:
patent: 5548224 (1996-08-01), Gabriel et al.
patent: 5625288 (1997-04-01), Snyder et al.
patent: 5638006 (1997-06-01), Nariani et al.

Affiliated with

Also associated with

Rating

Sensitive method of evaluating process induced damage in MOSFETs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sensitive method of evaluating process induced damage in MOSFETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sensitive method of evaluating process induced damage in MOSFETs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-656102