Sensitive magnetotransistor magnetic field sensor

Details Sensitive magnetotransistor magnetic field sensor Sensitive magnetotransistor magnetic field sensor

1983-07-18

1987-10-13

Strecker, Gerard R.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

Frequency of cyclic current or voltage

357 35, 357 36, 324252, H01L 2722, H01L 4300, H01L 2972, G01R 3302

Patent

active

047002115

ABSTRACT:
A magnetic field sensor having a lateral bipolar magnetotransistor incorporating only a single emitter region and whose base region is incorporated as a well in the surface of a silicon substrate of the reverse material conduction type. The P/N junction of the base region with the silicon substrate is reverse biased by means of at least one secondary collector contact. The emitter region must be kept as shallow than 0.5 .mu.m or be so lowly doped with impurity atoms that its resistivity is greater than 100 ohms per square or both. The sensitivity of the magnetic field sensor is approximately 100%/Tesla.

REFERENCES:
patent: 4100563 (1978-07-01), Clark
patent: 4240059 (1980-12-01), Wolf
patent: 4253107 (1981-02-01), Macdougall
patent: 4362990 (1982-12-01), Schneider et al.
Mitnikova et al., "Investigations of the Characteristics . . . , Measuring Collectors", Sov. Phys. Semicond., Jan. 1978, pp. 26-28.
Beresford "Magnetic Transistors Exploit New Theory of Carrier Modulation", Electronics, May 19, 1982.

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