Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1977-02-25
1978-02-21
Dahl, Lawrence J.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330291, 330296, 330311, H03F 316
Patent
active
040755762
ABSTRACT:
A preamp for coupling to an avalanche photodiode (APD) of an optical receiver has an input stage including a dual gate field effect transistor (FET) and a single gate FET coupled in a cascade arrangement. The dual gate FET has its first gate coupled to the output of the APD, its second gate and source grounded, and its drain driving the gate of the single gate FET in a cascade arrangement. The source of the single gate FET is level-shifted and coupled by means of a feedback resistor to the first gate of the dual gate FET to provide a negative feedback. The output stage is a third FET with its gate coupled through a blocking capacitor to the source of the single gate FET in the input stage and with its drain providing the output of the preamp. In a preferred embodiment, the FETs used are GaAs FETs (GAASFETs).
REFERENCES:
patent: 3271685 (1966-09-01), Husher et al.
patent: 3482167 (1969-12-01), Kaplan et al.
patent: 3927383 (1975-12-01), Fjarlie et al.
Dahl Lawrence J.
Humphries L. Lee
Malin Craig O.
Rockwell International Corporation
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