Thermal measuring and testing – Distance or angle – Thickness – erosion – or deposition
Patent
1992-08-10
1993-10-12
Cuchlinski, Jr., William A.
Thermal measuring and testing
Distance or angle
Thickness, erosion, or deposition
374 44, G01N 2500, G01N 2518
Patent
active
052519805
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to a sensing system for measuring a specific value such as the thickness, thermal conductivity, or the like of a substance to be measured and, more particularly, to a sensing system applicable to measurements of specific values such as the thicknesses and thermal conductivities of various substances to be measured, the concentration of a liquid, and the like, including measurements of the film thicknesses of evaporated/adhered/deposited substances in a vacuum evaporation apparatus, a plasma CVD apparatus, a sputtering apparatus, and the like, and the plating thickness upon Au plating.
BACKGROUND ART
Conventionally, a quartz type film thickness detector is used in a film thickness measurement of an adhered/deposited substance to be evaporated in a vacuum evaporation apparatus, a plasma CVD apparatus, a sputtering apparatus, and the like. The quartz type film thickness detector utilizes a phenomenon that the resonance frequency of a quartz oscillator changes according to the thickness of an evaporated film, and has features such as high detection precision and a high response speed.
In recent years, an electron impact excitation spectroscopy, which utilizes excited light upon electron impact of an evaporating metal, tends to be used in such a film thickness measurement. The film thickness measurement based on the electron impact excitation spectroscopy utilizes the following phenomenon. When a thermoelectron is caused to collide against the vapor flow of an evaporating substance to excite the evaporating substance, light having a wavelength spectrum inherent to the substance is emitted, and the light intensity at that time is proportional to the density of the vapor flow, i.e., the evaporation rate. In particular, this film thickness measurement has a feature that the film thickness of a two-element simultaneous evaporated film can be detected by providing an optical filter to a detection unit.
As another prior art, an amorphous semiconductor thin film having a large Seebeck coefficient, which can be utilized as a temperature sensor or a strain sensor, has been reported (U.S. Pat. No. 4,766,008, and Published Unexamined Japanese Patent Application No. 62-47177).
As a conventional method of detecting thermal conductivity, a method of measuring the thermal conductivity of a substance by bringing a thermal conductivity detection element into contact with the substance to be measured is adopted (Published Unexamined Japanese Patent Application No. 49-70672). More specifically, the thermal conductivity detection element is brought into tight contact with a substance to be measured, and a cyclic current is flowed through the thermal conductivity detection element to cause endothermic and exothermic reactions in a surface of the thermal conductivity detection element, which surface is in tight contact with the substance to be measured. At the same time, the temperature of the surface of the thermal conductivity detection element, which surface is in tight contact with the substance to be measured, is measured to detect a delay of a phase or a difference in amplitude ratio of the measured temperature waveform with respect to the current waveform flowed through the thermal conductivity detection element due to the thermal physical property of the substance to be measured. Thus, the thermal conductivity of the substance to be measured is measured using the density and specific heat values of the substance to be measured, which are obtained beforehand by some method. This method has a merit that a measurement apparatus is relatively light in weight.
As another thermal conductivity measurement method, a method of measuring the thermal conductivity of a substance to be measured by sandwiching the substance to be measured between substrates respectively having low and high thermal conductivities is also adopted (Published Unexamined Japanese Patent Application No. 53-107382). More specifically, on the substrate having the low thermal conductivity, a heat generating means,
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Hiraoka Jun
Kodato Setsuo
Naitoh Yoshinobu
Anritsu Corporation
Bennett G. Bradley
Cuchlinski Jr. William A.
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