Sensing in non-volatile storage using pulldown to regulated...

Details Sensing in non-volatile storage using pulldown to regulated... Sensing in non-volatile storage using pulldown to regulated...

2008-04-08

2009-10-20

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185270

Reexamination Certificate

active

07606076

ABSTRACT:
A pull down circuit pulls a bit line voltage to a regulated source voltage in a non-volatile storage device during a sense operation such as a verify operation which occurs during programming. The storage device may include NAND strings which have associated bit lines and sense components, and a common source line. When a selected storage element of a NAND string has been programmed to its intended state, the bit line is locked out during subsequent verify operations which occur for other NAND strings which are not yet locked out. The pull down device is coupled to each bit line and to the common source line, whose voltage is regulated at a positive DC level, to prevent coupling of system power bus (VSS) noise from the locked out bit lines to the not yet locked out bit lines.

REFERENCES:
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5371715 (1994-12-01), Kim
patent: 5386422 (1995-01-01), Endoh
patent: 5522580 (1996-06-01), Varner, Jr.
patent: 5570315 (1996-10-01), Tanaka
patent: 5774397 (1998-06-01), Endoh
patent: 5886926 (1999-03-01), Marquot
patent: 5994732 (1999-11-01), Ajika
patent: 6046935 (2000-04-01), Takeuchi
patent: 6097638 (2000-08-01), Himeno et al.
patent: 6151249 (2000-11-01), Shirota
patent: 6195297 (2001-02-01), Sano
patent: 6222762 (2001-04-01), Guterman
patent: 6225834 (2001-05-01), Gang
patent: 6353555 (2002-03-01), Jeong
patent: 6404678 (2002-06-01), Lin
patent: 6456528 (2002-09-01), Chen
patent: 6469546 (2002-10-01), Matano
patent: 6522580 (2003-02-01), Chen
patent: 6525969 (2003-02-01), Kurihara et al.
patent: 6560152 (2003-05-01), Cernea
patent: 6620682 (2003-09-01), Lee
patent: 6665213 (2003-12-01), Michael et al.
patent: 6751125 (2004-06-01), Prinz et al.
patent: 6795342 (2004-09-01), He
patent: 6801454 (2004-10-01), Wang et al.
patent: 6816411 (2004-11-01), Arai
patent: 6859397 (2005-02-01), Lutze
patent: 6888190 (2005-05-01), Yang et al.
patent: 6916708 (2005-07-01), Tao
patent: 7023736 (2006-04-01), Cernea et al.
patent: 7031210 (2006-04-01), Park et al.
patent: 7038963 (2006-05-01), Lee
patent: 7046568 (2006-05-01), Cernea
patent: 7057958 (2006-06-01), So et al.
patent: 7170784 (2007-01-01), Cernea et al.
patent: 7173854 (2007-02-01), Cernea et al.
patent: 7196928 (2007-03-01), Chen
patent: 7196931 (2007-03-01), Cernea et al.
patent: 7212445 (2007-05-01), Cernea et al.
patent: 7301817 (2007-11-01), Li
patent: 7447079 (2008-11-01), Nguyen
patent: 2003/0058722 (2003-03-01), Park
patent: 2004/0057287 (2004-03-01), Cernea
patent: 2004/0057318 (2004-03-01), Cernea et al.
patent: 2004/0109357 (2004-06-01), Cernea
patent: 2004/0255090 (2004-12-01), Guterman
patent: 2005/0024939 (2005-02-01), Chen
patent: 2005/0117424 (2005-06-01), Sung
patent: 2006/0126390 (2006-06-01), Gorobets
patent: 2006/0133172 (2006-06-01), Schnabel et al.
patent: 2006/0140007 (2006-06-01), Cernea
patent: 2006/0158947 (2006-07-01), Chan et al.
patent: 2006/0203545 (2006-09-01), Cernea
patent: 2006/0209592 (2006-09-01), Li
patent: 2006/0221692 (2006-10-01), Chen
patent: 2007/0008779 (2007-01-01), Isobe
patent: 2007/0014161 (2007-01-01), Li et al.
patent: 2007/0058435 (2007-03-01), Chen et al.
patent: 2007/0076501 (2007-04-01), Kang et al.
patent: 2009/0161433 (2009-06-01), Lee et al.
Notice of Allowance dated Jan. 5, 2009, U.S. Appl. No. 11/771,987, filed Jun. 29, 2007.
U.S. Appl. No. 11/739,501, filed Apr. 24, 2007, titled “Compensating Source Voltage Drop In Non-Volatile Storage.”
U.S. Appl. No. 11/966,325, filed Dec. 28, 2007, titled “Low Noise Sense Amplifier Array And Method For Nonvolatile Memory.”
PCT International Search Report dated Jul. 2, 2009, PCT Patent Appl. PCT/US2009/039211.
Written Opinion of the International Searching Authority, dated Jul. 2, 2009, PCT Patent Appl. PCT/US2009/039211.
Notice of Allowance dated July 25, 2008, U.S. Appl. No. 11/771,982, filed Jun. 29, 2007.

Affiliated with

Also associated with

Rating

Sensing in non-volatile storage using pulldown to regulated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sensing in non-volatile storage using pulldown to regulated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sensing in non-volatile storage using pulldown to regulated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4123650