Sensing circuit for multi-level flash memory

Details Sensing circuit for multi-level flash memory Sensing circuit for multi-level flash memory

2008-05-06

2008-05-06

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185200, C365S189090

Reexamination Certificate

active

11362067

ABSTRACT:
A sensing circuit for multi-level flash memory is disclosed. The advantages of the sensing circuit are reducing the circuit size, reducing the testing time for tuning reference voltage and maintaining a constant difference between two approximate reference voltages. The sensing circuit comprises a reference voltage generator which includes a number of serial connected resistive devices and provides several reference voltages by voltage division; a data saving circuit outputs a data voltage; a comparing circuit compares the data voltage with the several reference voltages to output a comparing signal; a decoder receives and then decodes the comparing signal to output the data.

REFERENCES:
patent: 5943272 (1999-08-01), Chang
patent: 6094374 (2000-07-01), Sudo
patent: 6097635 (2000-08-01), Chang
patent: 6404679 (2002-06-01), Guedj

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