Sensing circuit for EEPROM

Static information storage and retrieval – Floating gate – Particular biasing

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3651852, G11C 1606

Patent

active

058645020

ABSTRACT:
A sensing circuit for detecting data stored in a memory cell of an EEPROM by current detecting method is disclosed. The sensing circuit includes a constant current source supplying circuit for supplying a constant current. A loading circuit generates a current the same as the constant current generated by the current source supplying circuit when the memory cell sends out a logic low state signal, so that the data accessing speed during reading the data stored in the memory cell is increased.

REFERENCES:
patent: 5276644 (1994-01-01), Pascucci et al.
patent: 5621686 (1997-04-01), Alexis

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