Sensing circuit for a floating gate memory device

Miscellaneous active electrical nonlinear devices – circuits – and – Specific signal discriminating without subsequent control – By amplitude

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Details

36518907, 365196, 365210, 327108, 327541, 327530, 327546, G11C 700, H03K 301

Patent

active

053861582

ABSTRACT:
A sensing circuit for a floating gate memory device is disclosed. The sensing circuit has a first voltage amplifier which generates a first output voltage, and a current amplifier which receives the first output voltage and generates a first output current in response thereto. The first voltage amplifier has a control transistor which generates a first output voltage in response to the memory device being in one state and a second output voltage in response to the memory device being in another state. The circuit also comprises a dummy cell, a second voltage amplifier connected thereto for generating a second output voltage. A second current amplifier receives the second output voltage and generates a second output current in response thereto. A comparator receives the first and second output currents, compares them, and generates an output indicative of the state of the memory device.

REFERENCES:
patent: 4223394 (1960-09-01), Pathak et al.
patent: 5055720 (1991-10-01), Tiede
patent: 5111432 (1992-05-01), Miyaoka
patent: 5121007 (1992-06-01), Aizaki

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