Sensing amplifier for capacitive MISFET memory

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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307238, 307279, 307DIG1, 307DIG3, 365203, H03K 518, H03K 3286, H03K 3353, G11C 1140

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040607402

ABSTRACT:
In a sensing amplifier for a capacitive MISFET memory, the level of an output signal from the memory is shifted by a signal level shifting circuit and the level-shifted signal is applied to an input of the sensing amplifier to thereby provide a high speed operation.

REFERENCES:
patent: 3612908 (1971-10-01), Heimbigner
patent: 3868656 (1975-02-01), Stein et al.
patent: 3876991 (1975-04-01), Nelson et al.
patent: 3916430 (1975-10-01), Heuner et al.
patent: 3949381 (1976-04-01), Dennard et al.
Furman, et al., "Sense Latch Circuit for Memory Cells;" IBM Tech. Discl. Bull.; vol. 16, No. 9, pp. 2792-2793, 2/1974.
Surgent, "Insulated Gate Field-Effect Transistor Sense Amplifier Latch;" IBM Tech. Discl. Bull.; vol. 13, No. 9, pp. 2670-2671, 2/1971.
Rajan, "Single-Control Latch;" IBM Tech. Discl. Bull.; vol. 14, No. 12, p. 3746; 5/1972.

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