Sense-write circuit for bipolar integrated circuit ram

Details Sense-write circuit for bipolar integrated circuit ram Sense-write circuit for bipolar integrated circuit ram

1975-07-11

1976-08-03

Curtis, Marshall M.

Communications: electrical

Digital comparator systems

307235R, 340173R, G11C 1144

Patent

active

039732460

ABSTRACT:
A bipolar sense-write circuit is provided for sensing voltage levels representative of a logical "1" or "0" stored in a flip-flop storage cell and for writing voltage levels into the flip-flop storage cell. The sense-write circuit includes first and second amplifier stages which, when coupled to a selected flip-flop storage cell produce a voltage in the amplifier section approximately equal to the voltage on a collector node in the flip-flop storage cell. Each amplifier stage of the sense-write circuit utilizes a side of the selected flip-flop storage cell as a part of that amplifier stage, if the corresponding side of the flip-flop storage cell is "on". The amplifier stage connected to the "on" side of the selected flip-flop storage cell acts as a unity gain amplifier, such that the row selection voltage appears at the output of that amplifier stage. This arrangement allows the data stage of memory cell flip-flop to be sensed without the use of any fixed reference voltage generated external to the memory cell. The arrangement provides the additional benefit of reducing the required difference between the internal memory cell flip-flop voltages, proportionately decreasing the time required to write a given state into the flip-flop memory cell.

REFERENCES:
patent: 3292014 (1966-12-01), Brooksby
patent: 3307047 (1967-02-01), Narud et al.
patent: 3538348 (1970-11-01), Hillis et al.
patent: 3540005 (1970-11-01), Bernhardt et al.
patent: 3713115 (1973-01-01), Duben
patent: 3760194 (1973-09-01), Lutz et al.

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