Sense circuit for use in variable threshold transistor memory ar

Details Sense circuit for use in variable threshold transistor memory ar Sense circuit for use in variable threshold transistor memory ar

1978-06-29

1979-12-18

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307355, 307362, 307DIG3, 365184, 365196, 365207, H03K 520, G11C 700, G11C 1140, H03K 3353

Patent

active

041796268

ABSTRACT:
A memory sense circuit is described incorporating a number of field effect transistors for comparing the threshold voltage of two variable threshold transistors.

REFERENCES:
patent: 3925804 (1975-12-01), Cricchi
patent: 4054864 (1977-10-01), Audaire et al.
patent: 4090257 (1978-05-01), Williams
patent: 4090258 (1978-05-01), Cricchi
patent: 4090259 (1978-05-01), Wilcock et al.
patent: 4094008 (1978-06-01), Lockwood et al.
patent: 4096401 (1978-06-01), Hollingsworth
patent: 4130890 (1978-12-01), Adam
patent: 4139911 (1979-02-01), Sciulli et al.

Affiliated with

Also associated with

Rating

Sense circuit for use in variable threshold transistor memory ar does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense circuit for use in variable threshold transistor memory ar, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense circuit for use in variable threshold transistor memory ar will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-454683