Sense circuit employing complementary field effect transistors

Details Sense circuit employing complementary field effect transistors Sense circuit employing complementary field effect transistors

1977-05-12

1978-08-15

Anagnos, Larry N.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307200B, 307279, 307355, 307DIG3, 365196, 365202, 365205, H03K 518, G11C 706, H03K 3353, H03K 3286

Patent

active

041075560

ABSTRACT:
A sense circuit suitable for use with semiconductor memory arrays which, in contrast to sense circuits of similar type, exhibits no voltage offset in the latched condition between the input-output (I/O) nodes and the supply lines. The sense circuit includes first and second complementary inverters with inputs connected to first and second I/O nodes, respectively, and with outputs capable of being clamped to one or the other of the two supply lines powering the inverters. Selectively and sequentially enabled cross-coupling transmission gates are connected between the output of each inverter and the input to the other inverter, and selectively enabled biasing transmission gates are connected between the input and output of each inverter. In the operation of the circuit, the two input nodes are first precharged to a predetermined value by enabling the biasing gates. A signal is then applied to one I/O node causing its potential to vary from its quiescent value. Then, the cross-coupling gate connected to the output of the inverter whose input is connected to the one I/O node is first enabled and, subsequently, the other cross-coupling gate is enabled. When the two cross-coupling gates are enabled, the inverters are latched and form a flip flop with the first I/O node clamped to the supply line having the same binary signal and the second I/O node clamped to the other power supply line.

REFERENCES:
patent: 3868656 (1975-02-01), Stein et al.
patent: 3879621 (1975-04-01), Cavaliere
patent: 3983543 (1976-09-01), Cordaro
patent: 3983544 (1976-09-01), Dennison et al.
patent: 3983545 (1976-09-01), Cordaro
patent: 3992704 (1976-11-01), Kantz
Lohman, "Applications of MOSFETs in Microelectronics", SCP & Solid-State Technology (pub.); pp. 23-29; Mar. 1966.

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