Sense amplifier power supply circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Specific signal discriminating without subsequent control – By amplitude

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327538, 365226, G01R 1900

Patent

active

056660740

ABSTRACT:
A sense amplifier power supply circuit for supplying a power source to a sense amplifier of a semiconductor memory device having two or more memory cell blocks is disclosed including a first power closed circuit for connecting a first power voltage line to a second ground voltage line, a second power closed circuit for connecting a first ground voltage line to a second power voltage line, a first switching transistor for supplying a power voltage to the first power closed circuit, a second switching transistor for supplying a ground voltage to the second power closed circuit, a third switching transistor for supplying the power voltage to the second power closed circuit, and a fourth switching transistor for supplying the ground voltage line to the first power closed circuit. The first power voltage and the first ground voltage line respectively supply the power voltage and the ground voltage to operate sense amplifiers of a first memory cell array; the second power voltage line and the second ground voltage line respectively supply the power voltage and the ground voltage to operate the sense amplifiers of a second memory cell array.

REFERENCES:
patent: 5334890 (1994-08-01), Hardee
patent: 5424986 (1995-06-01), McClure
patent: 5602793 (1997-02-01), Tomishima et al.
"A 65-ns 4-Mbit CMOS DRAM with a Twisted Driveline Sense Amplifier" by Katsutaka Kimura et al., Journal of Solid-State Circuits, vol. sc-22, No. 5, Oct. 1987.

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