Sense amplifier in a dynamic RAM having double power lines

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307279, 36518905, G01R 1900, H03K 326

Patent

active

051305810

ABSTRACT:
A sense amplifier for sensing and amplifying data existing at a pair of bit lines in a DRAM and having double power lines for supplying separate supply voltages to a P-channel sense amplifying unit and to an N-channel sense amplifying unit in a partially activatable DRAM and comprising a memory cell array apparatus having a pair of bit lines BL and BL is disclosed whereby a peak current occurrence in the partially activatable DRAM is prevented and the sensing ability of the sense amplifier is increased.

REFERENCES:
patent: 4656370 (1987-04-01), Kanuma
patent: 4827454 (1989-05-01), Okazaki
patent: 4845681 (1989-07-01), Vu et al.
patent: 4855628 (1989-08-01), Jun
patent: 4857765 (1989-08-01), Cahill et al.
patent: 4926379 (1990-05-01), Yoshida
patent: 4973864 (1990-11-01), Nogami
patent: 5038324 (1991-08-01), Oh

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