Sense amplifier having reduced coupling noise

Details Sense amplifier having reduced coupling noise Sense amplifier having reduced coupling noise

1990-09-20

1992-12-01

Popek, Joseph A.

Static information storage and retrieval

Format or disposition of elements

365 63, 365206, G11C 700, H01L 2700

Patent

active

051684624

ABSTRACT:
In a semiconductor memory device having plural pairs of bit lines and plural sense amplifiers, a gate electrode of a sense amplifier transistor for sensing potential of a first side of a first bit line pair is formed with an extension portion extending under and along the first side of a second bit line pair. A capacitance C.sub.B formed between the extension of the gate electrode and the first side of the second bit line pair is determined to be equal or larger than capacitance C.sub.A formed between the first side of the first bit line pair and the gate electrode. Since the potential of the first side of the bit line pair fluctuates roughly in phase with that of the second side of the same bit line pair, a harmful influence due to interference noise can be reduced, without increasing the chip layout area, by only modifying the shapes of the gate electrodes of the sense amplifier transistors.

REFERENCES:
patent: 3942164 (1976-03-01), Dunn
M. Aoki et al., IEEE Journal of Solid-State Circuits, "A 60-ns 16 Mbit CMOS Dram with a . . . ", vol. 23, No. 5, Oct. 1988, pp. 1113-1119.

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