Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-04-26
1998-03-17
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
3651852, 3651853, 36518513, 36518907, 3652335, G11C 1606
Patent
active
057294925
ABSTRACT:
A sense amplifier circuit for a semiconductor memory device comprises a first current/voltage converter for convening a current of a memory cell to be read into a voltage signal, a second current/voltage converter for converting a reference current into a reference voltage signal, and a voltage comparator for comparing the voltage signal with the reference voltage signal. The sense amplifier circuit comprises a capacitive decoupler for decoupling the voltage signal from the comparator, and circuitry for providing the capacitive decoupler with an electric charge suitable for compensating an offset voltage introduced in the voltage signal by an offset current superimposed on the current of the memory cell to be read.
REFERENCES:
patent: 4264872 (1981-04-01), Suzuki
patent: 5289419 (1994-02-01), Hashizumi et al.
patent: 5305273 (1994-04-01), Jinbo
Terada, Y. et al., "120-ns 128K x 8-bit/64K x 16-bit CMOS EEPROM's," IEEE Journal of Solid-State Circuits 24:1244-1249, Oct., 1989.
Masuoka, F. et al., "A 256-kbit Flash E.sup.2 PROM Using Triple-Polysilicon Technology," IEEE Journal of Solid-State Circuits 22:548-552, Aug., 1987.
Carlson David V.
Nelms David C.
Santarelli Bryan A.
SGS--Thomson Microelectronics S.r.l.
Tran Andrew Q.
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