Sense amplifier for static memory device

Communications: electrical – Digital comparator systems

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307238, G11C 706

Patent

active

040457850

ABSTRACT:
In a metal oxide silicon memory device having an array of static memory cells, a sense amplifier for detecting signals produced by the cells connected between complementary bit lines. The amplifier includes a translator section that shifts the normally high bit and bit voltage levels to a lower voltage level at the control gates of signal output devices connected to output bus lines. Each output bus line has only a single device impedance to ground rather than the normally required stacked or series arrangement of control elements. This provides a low impedance to ground for one of the output bus lines whle the signal variation around threshold provides a relatively high impedance to ground on the other bus line, thereby providing fast response times.

REFERENCES:
patent: 3540005 (1970-11-01), Bernhardt
patent: 3600609 (1971-08-01), Christensen
patent: 3795898 (1974-03-01), Mehta et al.

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